Abstract
Since A. K. Geim and K. S. Novoselov peeled off successfully one layer graphite from the highly orientated pyrolytic graphite (HOPG) by mechanical exfoliation in 2004, numerous novel researches about graphene, a isolated mono-atomic carbon layer constituted of two-dimentional honeycomb lattice building block, had be triggered off. Due to graphene's fantastic and excellent properties, it is one of the candidates which are the new star for electronics industry in the next generation. Today, electronic communication products can be seen everywhere. It shorten the distance between people and is one of the essential factors to expedite scientific and technological progress. Due to a large carrier mobility and long-range ballistic transport, many high-frequency applications of graphene-based literatures were published. Although high-speed graphenetronic built on silicon carbide substrate (SiC) has excellent high-frequency characteristics, but the cost is very expensive and mass production is difficult. We shows state-of-the-art of high-speed graphenetronics built on insulator substrates such as sapphire and aluminum nitride. With the T-shaped gate and self-alignment, high-speed graphenetronics have achieved recorded unity current gain cut-off frequency of 43 GHz and maximum oscillation frequency of 26 GHz realized with transferred graphene films on AlN substrate. The performance has able to compare favourably with the case on SiC substrates. We can get high quality gate oxide layer (950~1100 nF/cm^2) by naturally dry oxidation, and complete the entire fabrication flow below 200 degrees. Therefore, it engaged to paves a way for seamless heterogeneous three-dimensional (3D) system integration with graphene-last flow in Si fab technology, where graphene IC's back-end-of line (BEOL) can be co-integrated with stand Si CMOS.