Abstract
In recent years, the portable electronic product have widely applied, such as digit camera, notebook computer, mp3 walkman, intelligent IC card, USB Flash personal disc and so on, these play an important role in the market. These products are all based on nonvolatile memory. Nonvolatile memories include three type: (1)conventional flash memory, (2)SONOS memory, (3)nanocrystal memory. These memories have low power losing and fast program/erase speed. Flash memory has leaking and program/erase problems when scaling down, but SONOS and nanocrystal memory have not these problems. Therefore, in the process of scaling down memory device, SONOS and nanocrystal memory are the better choice. In this thesis, we will bring up a new idea of crystallize nanocrystal. Co-sputter system has been introduced to deposit a SizGeyOz film to replace the Floating Gate in Flash structure. Unlike the conventional process, this is a new process to deposit tri-layer of memory structure, and SixGeyOz is a new material. After two different thermal treatments e RTO and Furance, Ge in the SizGeyOz film will be segregated to crystallize Ge nanodots embedded in the SiO2/GeOx film. There are three situations in RTO and Furnace oxidation because the different duration and temperature of oxidation, Three energy band models and chemical formulas can be considered to support experiment results.