Abstract
With the rapid development of technology, the most popular one in recent years is flexible electronics products, therefore the first, the substrate must be flexible, including plastic, glass, etc., with the fabrication process can achieve the flexible electronic products. Nowadays, the most commonly used in the semiconductor industry is silicon wafer. In order to achieve flexible and high-strength silicon wafer, thin silicon wafers is a very important, now the industry is able to achieve by thinning technique, the most widely used is back-grinding which can get high-quality, but subsurface damage layer must be removed by post-process then achieve the ultra-thin silicon wafer. The first part in this study is spin-etching technology., the initial thickness for grinding wafer is 120 μm, adjusting the spin-etching machine parameters with taguchi method to find the optimization parameters, and by existing spin-etching techniques to achieve uniform thin wafer ( TTV < 10μm) and eliminate the effect of residual stress . And our laboratory developed the metal-assisted chemical etching, the silicon wafer can strengthen by six times . So we apply this technology on ultra-thin silicon wafer, the same thickness of ultra-thin silicon wafer with nanostructure on back-side was increased by 1.5 ~ 2 times, and also enhance the flexibility of thin wafers. The second part is which integrating wafer thinning & back-side nanostructure apply on the PMOS IC 6 inch wafer, verify the electrical properties without much affected . Keywords : silicon wafer thinning, spin-etching,metal-assisted chemical etching, flexible electronics, PMOSFET, uniaxial Strain