Abstract
In this study, we design the new process for fabrication of Cu(In,Ga)Se2 solar cell to prove the assumption of the metal-organic-sputtering process . Firstly, we use RF sputter to deposit the CuInGa thin film which can control the components of Ga as the function of TMGa flow with measurement of EDS and the Raman spectrum and then and carry out the selenization process with selenium powder by furnace . And then, we can optimize the selenization process by the parameters, such as rate of heating, top temperature, duration time and amount of selenium powder. Furthermore, we obtain the CdS buffer layer with good coverage and high transmittance by a chemical bath deposition way . In this study, we also compare the difference between CuInGa and Cu(In,Ga)Se2 thin film by different annealing process . And we find that, the selenized CuInGa thin film is better than the other on micro-structure . Finally, we fabricate the Cu(In,Ga)Se2 solar cell with SLG / Mo / CIGS /CdS / i-ZnO / AZO / Al structure . In selenization process, we optimize the parameters and show the efficiency of 1.018 % with an open circuit voltage of 0.16 V, short circuit current of 22.90 mA/cm2 and fill factor of 0.29 as the best cell in our study .