Abstract
High Power metal-oxide-semiconductor field-effect transistors (MOSFETs) have been widely applied to power electronics owing to great semiconductor industry. In order to integrate power devices with planar IC process, the devices’ structure must be changed from the traditional vertical structure to lateral design, such that they can be integrated in the same chip. We can make the operation principle inside LDMOSFET clearly by performing the TCAD simulation. Finally, we use software simulation to obtain the details of mismatch characteristics under different situations. Careful tuning is made to obtain the optimum results. The impact of device mismatch becomes more important because the dimensions of the devices are reduced. The matching properties of the threshold voltage, saturation current, and conductance of the device have been analyzed and measured. This thesis is concerned with the analyzable precision for LDMOSFET, and predicts the mismatch behavior of devices over a wide operating range using a set of measured data. Statistical methods are used to analyze physical causes that relate the mismatch to the process technologies.