Abstract
In order to realize the goal of system on chip with silicon based process, the traditional vertical high-voltage device must be altered to lateral design. In this thesis, I focus on the design of 80 volt high-voltage LDMOS device by using Technology Computer-Aided Design tool for two- dimension and three- dimension simulation on electrical properties. And analyzed the device performance of the combined deep trench isolation process and the drift region in high voltage applications. The design is optimized and the simulation results are discussed.