Abstract
Abstract In this thesis, we fabricate a 4H silicon carbide (SiC) lateral by applying super junction theory and reducing surface field structure to reduce specific on-resistance and enhance breakdown voltage. In addition, we combine semi-insulating substrate to reduce substrate- assisted-depletion effect. By using painting software Laker to design different drift region length and field plate length on the mask and design symmetrically to save wafer area. About the manufacturing process, isolation region were formed by reactive ion etch (RIE) first, then use trim (software) to imitate ion implant does and energy. Third, to form ohmic contacts by rapid thermal anneal (RTA). Finally, evaporating metal pad to develop metal contact and field plate. The measurement results show that the on-resistance will enlarge with the increase of drift region length and transverse length. The results of reverse recovery characteristics test reveals characters of device are similar to majority carrier devices. In addition, one can find that the on-resistance will rise while temperature is rising; therefore, this result is very different form the traditional carrier devices. For the results of breakdown voltage measurement, breakdown voltage will also enlarge with the increase of drift region length and transverse length. The design of field plate also operates effectively in the device. Finally, the best value of Baliga Figure of Merit (BFOM) can reach to 20MW/cm2.