Abstract
An improved method to determine the effective channel length and parasitic drain/source series resistance is presented. The physical-meanings of the gate-voltage dependent effective channel length and series resistance are also described. This improved method as well as others are applied to MOSFET's fabricated in a submicrometer CMOS process. The results show the consistency with different methods, but also present some problems to be solved in the future. A new physics-based MOSFET noise model by Kwok K. Hung et al. that can accurately predict the noise characteristics in all operating regions has been reviewed. How to extract the noise parameters of the two noise models by Hung et al. and by SPICE, respectively, is described in detail. The accuracy of the two noise models is compared. The results show that the new noise model by Hung et al. has better agreement between the measuremet and simulation than the one by SPICE.