Abstract
A forest of diamond nanotubes were fabricated on the Boron Doped polycrystalline diamond/Si(100) substrate in a 13.56Hz radio frequency plasma enhanced chemical vapor deposition chamber by 100W power, for 12 hour etching time, at self bias voltage of -850~-950V. Diamond nanotubes of about 8.4 μm in length and 0.56 μm in diameter were scratched off and then deposited with Al/Ti at two ends. The Al/Ti/diamond was determined to be an Ohmic contact. With different RTA (Rapid Thermal Annealing) treatments at 600℃ for different periods of time, the resistance of a submicron diamond tube reduces after the RTA treatment. The optimum RTA time is thirty minutes at 600℃, and the resistance is reduced to 9.17×102Ω. The slope of (dI/dV) in the current-voltage curves increases with the increase of temperature.