Abstract
In recent year, non-volatile memory has become more and more important in our life. However, as the CMOS scaling goes on, we need faster, smaller, and less power consume’s memory to use in portable merchandises. Under this condition, resistive switching random access memory (RRAM) has strong potential among next generation non-volatile memory candidates. Hence, our study will focus on RRAM and its applications.Among so many RRAM materials, we decide using HfO2 to be our dielectric layer and Ti as top electrode TiN as bottom electrode. It is because HfO2 has been broadly used in COMS process and Ti, TiN also wieldy used in via as adhesion layer and stopping layer. So our material can directly compatible with CMOS process without any other contaminations issue.Our study can be divided to two parts: one is basic HfO2 RRAM characteristic the other is studying the possibility of HfO2 RRAM application in multi-level operations. Finally, by using changetemperature technique, we can abstract the defect levels, erase/programming times,power consumptions and device operation behavior under different compliance current. Hoping our study will give other researchers help and contributions to RRAM.