Abstract
In this thesis, we deposited ZnO thin-film using RF-magnetron reactive sputtering. Argon and oxygen are used as the reactive gas source. We verified the mixture ratio, substrate temperature and total pressure to deposit different crystalline and composition thin-film. We optimized our thin-film quality according to the results of these process recipes. Moreover, we deposited thin-films on both ITO and p-GaN substrate in order to fabricate a p-i-n structure, measuring the light emission and absorption properties. Meanwhile, by using CAD ( Computer Aided Design ) tools, we optimized the device structure. We take the physical parameters we measured feedback into the simulation tools, leading our simulation more accurate. Finally, according to our best recipe, fabricate a p-i-n device. EL ( Electro-Luminescence ), PL ( Photo-Luminescence ) and I-V measurements are taken as the device characteristics.In ZnO:Cu analysis, we deposited ZnO:Cu films at 15 mTorr. By using the mixture of Ar and O2 mixture, using various pressure and deposit our films. And we measure both optical and electrical properties of this film. Also, we observe surface morphology by SEM. And finally calculate the carrier transition behavior in this layer. In ZnO:Al analysis, we deposited ZnO:Al films in both 15 and 20 mTorr. After that, we measure the optical and electrical properties. And optimize the electrical property. We found that in our system our optimize resistivity is around 2x10-2 ohm-cm.According to the optimize recipe, we deposit ZnO films on both ITO and GaN substrate. I-V and EL and PV characteristics are taken as our focus measurements. By this research, we can advanced understand the role of copper in ZnO and the advantages of ZnO/GaN heterojunction diode. This is just a beginning; so many physical behaviors are still unknown. Due to this reason, we will take more effort on the advanced properties of ZnO and p-type TCO researching.