Abstract
In this work, the electrical characteristics of Au/ZrO2/Silicon(P-type) (MIS) capacitors and n-channel metal gate metal-oxide-semiconductor field effect transistors (MOSFET) with ZrO2 gate dielectric are investigated. The ZrO2 thin films are deposited by magnetron control RF sputtering. It was observed that ZrO2 thin film was crystallized as deposited by X-ray diffraction spectra. The dielectric constant of 37nm thick ZrO2 thin film is around 18 at 100kHz. The leakage current is around 5.24×10-3A/cm2 in the range of -1V. The I-V and C-V characteristics of MIS capacitors are discussed. The conduction current mechanism of ZrO2 films at different temperatures is studied. For MIS structure, Schottky emission is dominant in the temperature range from 525K to 575K and at low electrical field, when the device is negative biased (operated in accumulation region). The IDS-VDS and IDS–VGS characteristics are measured from MOSFET with ZrO2 gate dielectric. The electron mobility obtained from gm versus VG plot was about 184 cm2/V·sec The subthreshold swing was 118mV/dec. The interface density, surface recombination velocity and the minority carrier lifetime measured from gated diodes. Comparison with conventional MOSFETs with SiO2 gate oxide was made.