Abstract
Dy2O3 is a promising candidate for future MOS gate dielectric applications. In this work, MOS capacitors and MOSFETs with Dy2O3 gate dielectric were fabricated. The maximum electron mobility is 329 cm2/V-s. The time dependent dielectric breakdown (TDDB) of Dy2O3 as a function of electric field and temperature was studied. It was observed that the Weibull slopes were independent of capacitor area. The Weibull slope increases with increasing Dy2O3 thickness. The TDDB of Dy2O3 follows the E model. The activation energy Ea is linearly dependent on the electric field and the field acceleration parameter γ is independent of temperature.