Abstract
his study attempted to investigate the silicon orientation effects on fabricating orientation dependent Silicon On Insulator materials by using smart cut technique. Si<100>, Si<111>, and Si<110> wafers were employed and implanted with molecular hydrogen ions (H2+) with a kinetic energy level of 200 keV and molecular ion fluence of 2.5×1016 cm-2. Following implantation, the experimental details are divided into two parts, the one is using optical microscopy (OM), raman scattering spectroscopy (RSS), secondary ion mass spectrometry (SIMS) and cross section transmission electron microscopy (XTEM) to probe the specimens’ surface blistering and exfoliation behaviors, the evolution of radiation damage, hydrogen trapping depth and the micro structure of radiation damage after annealing, respectively. In addition, the another part is using smart cut technique fabricating difference orientation SOI materials and analysis the transferential silicon thin film quality by OM, AFM, and XTEM. The results revealed that surface blistering and exfoliation behaviors are mainly due to a combination of nucleation and growth process of hydrogen bubbles. The nucleation process is strongly dependent on the silicon areal number density, while the growth process is dominated by the silicon intra-planar spacing and surface free energy. Also, the areal number density, mean diameter and fractions of blisters and craters are depended on silicon orientation. This phenomenon is further validated by the ratio of the VH3 (or V2H6) defect complex phase to the Si:H bonding configuration phase given in the OM results. Moreover, the SIMS results indicated that the hydrogen trapping depth in specimen surface is closely to the depth of wafer cleavage when fabricating silicon-on-insulator (SOI) materials. Finally, this study has shown that the most optimal post-annealing temperature is nearly the exfoliation temperature, and the quality of the transferential silicon thin film is also strongly depend on silicon orientation.