Abstract
Epitaxial growth of TiN (150 nm) on Si (001) has been thoroughly investigated by X-ray pole figure analysis. For reactive magnetron sputtering using metal target the epitaxial ordering of sputtered atoms starts between 300℃and 400℃. Below the range the films have fiber structure with TiN (002) parallel to Si (001). Above the range further in-plane order is developed such that Si（001）〔110〕// TiN（002）〔110〕is clearly established by both X-ray and electron diffractions. This is being the case despite the large lattice mismtach (□a/a=24.6%) suggesting that lattice matching is not always the primary factor for epitaxial growth. Epitaxial growth of TiC (100 nm) on Si (001) has been thoroughly investigated by X-ray pole figure analysis. Growth is achieved by reactive magnetron sputtering using metal target in a mixture of argon and acetylene. The acetylene partial pressure of is kept low at 2.6×10-5 Torr and the substrate temperature is higher than 500℃. This process is strikingly similar to the epitaxial growth of TiN, which suggests that the diffusion of metal atoms to kink sites is the dominant factor during epitaxial growth; lattice mismatch does not determine epitaxial growth.