Abstract
Ⅲ-nitride semiconductor heterostructures have been widely applied for blue and white light LEDs. However, the internal piezoelectric field can produce large quantum confined stark effects (QCSE), and reduce the light emission quantum efficiency. Here, we use InxGa1-xN (InGaN) nanorod heterostructures grown by plasma-assisted molecular-beam epitaxy (PA-MBE) for experimental investigation of QCSE. We have measured the micro photoluminescence (PL) spectra for the shift of PL peak energy versus optical pumping power intensity and time-resolved PL spectra for exciton measurements using InGaN nanodisk samples with different nanodisk thicknesses. We found that the thickness of InGaN nanodisk plays a significant role in the observation of QCSE.