Abstract
We investigate the reliability of GaN metal semiconductor field effect transistor. The high quality GaN was grown by metal organic chemical vapor deposition (MOCVD). We used Ni/Au as a schottky gate and Ti/Al/Ti/Au as a drain source of GaN MESFET. It was found that the performance of GaN MESFET was not changed after heated at 300℃ for 120m. No degradation of ohmic contact and schottky contact was occurred. The better reliability of GaN MESFET was demonstrated.