Abstract
GaN-based Light - emitting diodes, whose active regions are made of InGaN, have vigorous development in recent years. Nitride devices have great potential for various applications, such as optical data storage and full-color displays. But there are many issues to be solved, like the dislocation, behaviors of multi-quantum wells system, and the effects of temperature. References have shown the characteristics of the nitride devices and the possibilities to improve the performances of GaN-based LED. But only a few phenomena or the effects of single parameter have been discussed. A better understanding of the properties of nitride devices could be gained by simulation. APSYS is two-dimensional (2D) software and it uses finite element analysis and modeling software program for semiconductor devices. Its advanced physical models provide a flexible modeling and a simulated environment for modern semiconductor devices. APSYS examines the effects of each parameter and helps the devices to reach their optimization. The results of APSYS simulation provide the information of device’s characteristics and suggest how to improve its performance. By changing polarization and Shockley-Read-Hall lifetime, we develop a method to simulate the real condition. Finally, the temperature effect to the optimal design is considered. With a series of simulation processes, we get familiar with GaN-based LED and know the key point. We also test and verify that the APSYS simulation is feasible for application. We can predict the possible characteristics and effects. Therefore, a more precise direction of the device design helps to save lots of time. With the help of the APSYS simulation, the rapid development of GaN-based LED could be expected.