Abstract
Recently, there are more and more applications based on GaN related optoelectronics and plastic fiber communication happens to be one of the potentials. In this study, InGaN/GaN material was used for the EAM and the absorption edge is about 400nm. Our design is restricted by the consideration of future integration between GaN based Electroabsorption modulator (EAM) and HBTs on a single chip. On top of the p layer, a 4 nm n-type thin tunneling junction is added to improve the p contact. If we increase the thickness of the n-type tunneling layer, the structure could be also shared for npn HBTs. During our study, the processing steps and parameters have been refined and identified. The IV measurement has proved that the EAM does exist a p-n junction. Since there is only a fix wavelength 405nm laser source available, the photocurrent measurement was done only at 405nm and the result showed that the fabricated EAM is capable of modulating.