Abstract
In this paper,we use MPECVD to deposit diamond films on silicon and gold substrate,mixed with methane, hydrogen and urea.We use SEM, four point probes, Raman, FTIR, field emission J-E measurement to realize the thin film properties and try to find out the behavior of nitrogen in diamond films. In my study, when pure urea mixed with hydrogen and methane,we got the best field emission properties:low turn on field as 0.56V/mm,and a high emission current density as 2665 mA/cm2 at 1.5 V/mm.It seems that the G-band or the C-N bonding should account for the better emission properties. In addition,through the interface study, we find that the gold interface can improve the emission proerties.