Abstract
We try to improve the performance of rr-P3HT Field Effect Transistor by dip coating. Glass is the substrate with SiO2(APCVD) gate dielectric layer about 200nm. .S-D(Au) is deposited by (thermally grow) and lifted off. Afterward we dip the sample into HMDS and solution with P3HT to make the active layer. We change the different solvents of P3HT (Chloroform、P-xylene、Toluene), the concentration of solutions and the speed of dip coating to observe the variation of sample mobility and on/off ratio. Finally we try to make samples exposure to N2 gas or packed for several days to increase the on/off ratio. Our results is that sample mobility achieve order and the best is 0.298 with 3000 on/off ratio.