Abstract
The purpose of this paper is to know that different thicknessTiNwhich variations of stress to different size of contact holewillhave any changes on shallow junction leakage current.we useionimplant through an amorphous thin film,then sputtering Ti toformTisilicide and shallow junction at the same time by two stepRTA(rapid thermal annealing),matching contact hole of differencesizeand TiN of difference thickness,and measuring leakagecurrent atreverse bias 5(V).Besides,by XRD to know TiN and TiSi2orientation,SIMS to obrserve junction depth.The result indicatedthat between LPCVD TiN 500A and TiN 300A sample which depositTiN 300A had smallerJrp.In addition,sputtering Ti on a-Si firstby RTA 650,700,750 30sec and second by 900 30sec,we can find thefirst higer RTA temperaturecan get better TiSi2 that is lowresistivity and more C54 phase.It can also efficently reduce Jrpof shallow junction.Furthermore by SEM,we get junction depthabout 700A.