Abstract
The trend of shrinking the size of semiconductor devices leads to high aspect ratio trench or vias. Thus the need for unidirectional flux of metal is urgent and IPVD (Ionized Physical Vapor Deposition) is a promising new method. In the paper, we discuss the relation of plasma characteristics ( plasma potential、plasma density、electron temperature) and outer parameters ( neutral gas pressure、RF power) of the IPVD system. On the other hand, since the plasma is exited by using a 13.56MHz RF power supply, we have developed a RF compensated Langmuir probe to measure the plasma characteristics.