Abstract
English Abstract In this thesis computer aided simulation tools are used to design a Quasi Vertical Double Diffused Metal Oxide Semiconductor Field Effect Transistor (QVDMOSFET). The proposed new structure QVDMOSFET has breakdown voltage BVOFF = 99.64 V ; specific turn-on resistance RON,SP = 120.90 mΩ x mm2; and area size = 28.0 x 1μm2) . This thesis provides the research results of structural effect influence on BVOFF and RON,SP in QVDMOSFET.