Abstract
Abstract Copper was electroless deposited on the diffusion barrier TiN, and TiN was deposited in a Ar/N2 discharge by reactively sputter. Analysis of resistivity, crystal orientation, grain size,and inter-diffusion phenomena were carried out by four-point probe,SEM,AES,XRD,leakage current,and C_V measurement. Blanket electroless copper was deposited on the TiN300A/500A, analyzed by XRD under 450、550℃ sintering. And AES was used to check the inter-diffusion phenomana. Then,C_V measurement of Cu/diffusion barrier/Si MOS capacitor at 1MHz and leakage current of Cu/diffusion barrier/p┼n junction diode biased with –5V were used to study the thermal stability. The sample of TiN500A shows good thermal stability at temperature 400℃for 30min., but not at 500℃.