Abstract
This work is focused on the optimization on the composition and structure of electroless CoWP catalyst to enhance the carbon nanowire growth for interconnect application. The blanket (Cu/Ti/SiO2/Si) wafers were used to optimize the electroless plating process of CoWP for carbon nano-wire (CNW) growth. The structure wafers (provided by TSMC) with 70 nm via and Cu line underneath were used to measure via- resistance after CNW growth. The pH value, plating temperature, and plating time were optimized to modify the morphology of CoWP for CNW growth. Besides, the effect of W concentration on CNW growth was also investigated. The CNWs were grown by the chemical vapor deposition (CVD) at 400 oC, using C2H2 as a reaction gas at 0.05 – 2.5 Torr with Ar as a carrier gas and H2 to activate the catalyst. For CNW-via resistance measurement, Pt was deposited on the CNW-via by focus-ion-beam technique. The CNW-via resistance was measured by Multi-Probe Nano-Electronics Measurement (MPNEM) system. The ohmic behavior and a resistance of 7.2k Ω/via of CNW-vias was measured, which needs further improvement for future interconnect application.