Abstract
Printing technology has played a great role in propagation and development of modern knowledge and information. With the progress of technology, people developed various kinds of printing technology. Especially for thermal transfer printing which is widely used in daily life. For example, the invoice we received is printed by using heat-sensitive paper, and the photo printing by sublimation is one of applications of thermal transfer printing. These technology has given us great convenience in life. Heat transfer printing technology was introduced since 1987. The Japanese scientists used semiconductor processing technology to make high-resolution heat transfer printing head. This printing head has advantages like high productivity, non-vulnerable to physical damage. In this thesis, we will put emphasis on the production of Thermal transfer printing head. In the Thermal print head, the most important part is heating resistor. The sheet resistance of this heating layer is required to be 3000 Ω. The thickness of the heating resistor is bonded within 35 II to 50 nm. Tantalum silicon oxide is highly thermal resistive, nonvulnerable to high temperature and high resistivity material. Thus, tantalum silicon oxide is used as the material of heating resistor. In this experiment, we use RF sputtering system to bombard the tantalum silicon oxide and tantalum tungsten Target, fabricate the heating resistor by using RF sputtering to deposit tantalum silicon oxide film, discuss the relationship between RF sputtering parameters and the film resistance, and successfully deposit heating resistor which is required. Eventually, We use the heating resistor in the thermal print head device.