Abstract
In recent years, applications of chemical vapor deposition (CVD) diamond thin films become more and more widely. However, because of having characteristic of polycrystalline, it must be polishing in final process to increasing the quality of products and extracting the applications of CVD diamond thin films (CVDD). In each kind of diamond polishing technologies, Thermal-Chemical polishing not only has the advantages of low processing time and low cost in polishing large area CVDD, but also can gats the finishing surface of CVDD. It’s no doubt that Thermal-Chemical polishing method will become more and more important in CVD diamond polishing technology.In order to increasing the applications of CVDD, we design a experiment to observe the effect of process conditions for the surface roughness and removing rate of CVDD. At the same time, we research on the effect of the material properties for process conditions to find the mechanism for this polishing.By the experiment result, we got the effect of four polishing conditions for CVDD and established the system method of designing the best process conditions of large area CVDD. In addition, by establishing the polishing model compared with the experiment result, we proved that removing rate was effected mainly by the diffusing rate in Fe-C polishing system. By using the model, we can use the value of temperature calculating the approximate value of removing rate.