Abstract
In this thesis, IGZO solutions based on a co-precipitation method were further fabricated using two processes: hydrothermal route and calcination route. In(NO3)3、GaCl3、Zn(NO3)2 was used as a salt precursor and NaOH、NH4OH was used as an alkaline precursor. Differing from the common sputtering deposition techniques, the solution was deposited by a spin-coating method onto glass substrates, at room temperature, and subsequently the IGZO thin films were observed via differential heat treatment. DLS、SEM and XPS were used to examine grain morphology and components and XRD was used to analyze the crystalline phase of thin films via differential heat treatment. XRD patterns indicated that the sample prepared using the hydrothermal route revealed clear diffraction peaks within the range of 100-250℃ and amorphous phase within the range of 250-800℃. As well, a new crystalline phase IGZO4 was shown beyond 800℃. Based on UV-VIS spectra, the transmittance of IGZO thin film in the visible range was measured above 90 %. Finally, we coated material on the TFT channel area and observed on-off properties of the device.