Abstract
Flash Memories are used extensively various portable electronic products. The Moore’s law predicts that flash memory cells scale down one generation in two to three years. When IC technology scales to nanometer feature size, flash memories will face many challenges. To further increase memory density, many researchers propose new cell structure, innovative operations and array architectures on cell. However, issues on cell reliability and disturbance are generally believes to put the ultimate limit on cell size.. In this work, two major subjects are investigated. First, the basic model on the data loss in the ETOX and SONOS cells is proposed by combing the trap assisted tunneling and Poole Frenkel leakage currents. In addition, a data retention characteristic in ETOX and SONOS cells are predicted by the model. Using a MATLAB program, the data retention characteristics for devices with various structures are estimated. This simulated result shows fairly good agreements with data reported in the literature.