Abstract
In this work, we develop a new chemical vapor deposition system called the thermal plate-assisted chemical vapor deposition (TPACVD) in our laboratory. This system combine the chemical vapor deposition technique with the thermal plate-assisted installation. Through these two independent heating mechanism, our goal is to grow high-quality graphene with this system. After the TPACVD process is done, we indentify the quality of graphene by means of inspecting the Raman spectroscopy. Graphene is now widely used in signal amplification and electron switches, and it is formed with a carbon thin film which consists of only one element. As a result, the thickness of this film is in nano scale. The chemical property of graphene is very stable, and the unique crystal lattice make it have special electric band structure. This special property of graphene contributes to its excellent transfer characteristic, and make graphene the most promising two-dimensional material. We design the electrode installation of TPACVD system by estimating the conditions of heat transfer, and choose suitable heating plate for this system. We grow the graphene film by controlling these two heating mechanism, and identify the quality of graphene by means of analyzing the Raman spectroscopy. We systemtically change the setup parameter to achieve the best growth condition for our TPACVD system. During the whole graphene growth process, we do the copper sheet pre-treatment to effectively remove the metallic oxide on the graphene. This way can improve our sample quality. In addition, we consider that it is possible for us to use this TPACVD system to grow other two-dimensional material, such as MoS2、WS2、WSe2……etc, by remodeling it. It makes TPACVD system potentially important for graphene growth in the future.