Abstract
In recent years, demands in the semiconductor memories has increased, while biomedical electronics also gradually shows its demands for non-volatile memories, such as applications in neural circuits. However the manufacturing cost of embedded Flash memory is much higher than that of CMOS logic technology. This thesis presents a novel embedded Analog Gateless One-Time-Programming Memory, which is fully compatible to CMOS process. The gateless memory structure includes a gateless storage node and select transistor; the charge storage node is based on a parasitic ONO structure. The cell can be programmed by CHHIHE (Channel Hot Hole Induced Hot Electron) injection. The source implant is well designed, which can let the storage node partially turned-on and gradually increase the read current level, the storage level can reach any state between 1.8A and 2.3A. In this paper, the electrical characteristics of this cell were also investigated by three-dimensional device simulation.