Abstract
四種俱有積體偶合電容及多晶矽偏壓電阻之矽像素感測器已經被設計出來並製作完成。矽像素感測器是製作在厚度 280 微米，晶格排列方向為<111> 的 N 型矽晶片上。每一個感測器的面積是 1.2 × 1.2 平方公分，並包含有 30 × 30 個二極體。 我們採用一層厚度為 80 毫微米的閘極氧化物來提供每平方公分為 53.3 毫微法拉的偶合電容。當完全空乏電壓為 70 伏特時，感測器之漏電流分別為 0.0975， 0.0585， 40.279 和0.1078 微安培/平方公分，其對應之感測器面積為 12475 × 12480，12475 × 12480， 12450 × 12480 和 12450 × 12455平方微米。由電性量測比較兩種矽探測器之漏電流及接面電容值，矽像素感測器均小於細微條感測器。這些量測也證實除了一個有缺陷的感測器外，我們所研製的矽像素感測器可以運作。Four kinds of the silicon pixel sensors with integratedcoupling capacitors and polysilicon bias resistors have beendesigned and fabricated. The pixel sensors were processed on n-type silicon wafers with the thickness of 280 μm and theorientation of <111>. Each sensor with area of 1.2 × 1.2 c㎡includes 30 × 30 diodes. A 80 nm gate oxide thickness waschosen to provide a coupling capacitance of 53.3 nF/c㎡. A fulldepletion voltage of 70 V and the leakage currents of 0.0975,0.0585, 40.279, and 0.1078 μA/c㎡ for the sensors areas of12475× 12480, 12475 × 12480, 12450 × 12480, and 12450 × 12455 μ㎡ respectively were measured. The electrical tests indicatethat the leakage current and the junction capacitance of thesilicon pixel sensors are smaller than that of the siliconmicrostrip detector in this study. The characteristicmeasurements show that the developed pixel sensors can workexcept a defective one.