Abstract
本實驗是以磁控濺鍍的方法，在矽晶片鍍上一層鈦薄膜藉由快速退火處理(RTA)得到了TiSi2 (C54)相，並進而在鈦上再鍍一層TiN，以求退火後可得到TiN/TiSi2/Si的結構。實驗的控制變因有氣壓、偏壓及溫度，其中尤以溫度的改變對於薄膜結構有很大影響，在不加溫下，鈦薄膜只有一根繞射峰，在300℃下出現了二根繞射峰，在400℃下則發現有三根繞射峰，經過反覆鑑定，認定三個情形皆為鈦薄膜，但以不同晶格方向出現。退火處理後發現，在600℃, 700℃下退火並未有相的改變。雖然鈦的射峰有些變化但仍以鈦的繞射峰為主。但經800℃退火後發現到TiSi2;(C54)相的形成，且伴隨有其他鈦矽化合物產生，若反應完全則可見到完全的TiSi2;(C54)相，而無其他相出現。且TiSi2有強烈的優選方向在(004)及(022)面，TiSi2生成時伴隨有 "snowplow effect"現象，氧明顯的隨著TiSi2的生成而被推向薄膜表面。The behavious of oxygen impurities during rapid thermalprocessing of Ti Si diffusion couples has been studies from600℃ to 900℃. Samples were prepared by sputter deposition of500nm of titanium on (001) silicon wafers which were thenannealed in ambient argon. The investigation techniquesincluded depth profiling using Auger electron spectroscopy andSecondary ion mass spectrmetry,csanning electron microscopyand X-ray diffraction. The oxygen impurity effect are mainlyand the oxygen diffusivity in titanium. At elevatedtemperatures, the oxygen containation orginating from thechamber is the cause of major impurity effects. After annealingin 800C Keeps 30 seconds, TiSi2 (C54) was found by X-raydiffraction . From depth profile of AES we find the snowploweffect. An incompletely reacted silicon-dificient Ti-Si-Osublayer forms on top of the TiSi2 layer . Our result suggestthat this layer is a mixture of TiSi2; and unreacted TiOx.