Abstract
Gallium nitrid semiconductors have been a focus of intense research effort because of their importance in light emitting, lasing, high frequency, and high power devices. In this study, we use a defect selective passivation with filling silica nanospheres in GaN light emitting diodes. Wet etching are used to reveal the termination of defect site and forms hexagonal etched pits. Then the etched pits are filled with silica nanospheres, which could blocking the propagation of threading dislocations in subsequent regrows, and finally improving both the electrical and optical characteristics in GaN light emitting diodes.