Abstract
This research is aim to fabricate high energy resolution N-JFET silicon drift detector used in energy dispersive x-ray spectrometer to detect characteristic X-ray of material for composition information of selected region of material. N-JFET silicon drift detector integrates FET into detector chip, which makes shorter path of signal, and decrease thermal noise for cooling with chip simultaneously. Inner leakage current can be decreased with guard ring and enhance energy resolution and quantum efficiency of low energy X-ray with shallow implanted structure; in addition, larger window area leads to thinner dead layer, which can detect lower energy to improve performance of detector. We have detected characteristic peak of 241Am(5.468 MeV), and verified α particle by calculating stopping power of α particle with different distance in air. However, we have not detected characteristic peak of 55Fe(5.898 keV) because of overhigh noise. There are two possible reason for above result; first, the signal of 55Fe(5.898 keV) is 920 times smaller than 241Am(5.468 MeV). Second, polluted surface of detector causes increase of leakage current with higher bias. Those reasons could make 55Fe(5.898 keV) covered under noise. If contamination problem can be solved with vacuum package, detecting characteristic peak of 55Fe(5.898 keV) is possible.