Abstract
Chemical Mechanical Polishing is the most effective method in the process of wafer planarization. As the size of silicon wafer and line width is improved, the development of the technique of planarization has been a crucial issue. Because surface circumstances of polishing pad differ from process to process, the type selection of diamond disk and the parameter in dressing must differ from process to process. Previous research [22] shows that the stability of dressing rate and the ability of extending the life of polishing pad of BODD (Brazed Organic Diamond Disk) is better than BDD (Brazed Diamond Disk), which performs the same dressing rate. However, the influence in polishing pad cause by the change of the design is not mentioned. This research discusses the cutting depth, the depth of groove and the dressing rate in the change of the design parameters by the model simulation and trajectory simulation. The influence of the change of dressing parameter is discussed by trajectory simulation on the other hand. The model and the simulation this research showed could provide users and designers to know how to design a BODD and use a BODD with their need. The index of the area of crossing region and the index of uniformity could also be the judgment of the property of the polishing pad dressed by BODD. Key words: Chemical Mechanical Polishing, Diamond Disk, Diamond Trajectory.