Abstract
Silicon Carbide(SiC) has 2.9 times higher bandgap energy,10 times higher critical breakdown electric field,3.3 times higher thermal conductivity and 2 times higher electron saturation drift velocity compared to silicon. The specific on-resistance in SiC power device at a given breakdown voltage is about 200 times to 400 times lower than in silicon device. The SiC power device can operate at an environment temperature higher than 350℃ and need no expensive cooling equipments, so, it will play an important role in the development of future power device. Because of the power metal-oxide-semiconductor field effect transistor(MOSFET) is a unipolar device and consumes low power, it is especially suited to make switching device. Therefore, the development of SiC power device is mainly SiC power MOSFET，and SiC UMOSFET receives more attention than others because it has highest channel density and lowest specific on-resistance. But the specific on-resistance of SiC UMOSFET has about 10 times difference to theoretical value because of process effect. To solve this problem, the Electronics Research & Service Organization of Industrial Technology Research Institute proposed a novel SiC Pinch-Accumulation UMOSFET, which uses the accumulation channel to raise the electron mobility and then decrease the specific on-resistance of conventional SiC UMOSFET. This study will use MEDICI to optimize the novel SiC PAU-MOSFET. Finally, we will get a SiC PAU-MOSFET which has blocking voltage and specific on-resistance of 4200 V and 26 mΩ-cm2,respectively. The Maximum electric field of bottom trench oxide is 4.5 MV/cm.