Abstract
A novel on-chip current sensing technique suitable for hysteresis-current-controlled (HCC) boost converter is presented which has some advantages, such as simple structure, the improvement of power conversion efficiency, etc. In this thesis, the proposed hysteresis current mode boost converter has a simple structure (the slope compensation is not required) and fast transient response (it has a higher crossover frequency and enough phase margin to avoid the oscillation). When using the proposed SENSEFETs structure and the switching-capacitor technique to monitor current on a power conductor, the power efficiency of the converter can be improved and subsequently has low power consumption. The proposed current sensing technique has been fabricated by TSMC 0.25μm CMOS HV process. In the boost converter, the operation voltage is from 3.5V to 4.5V, the output voltage ripples less than 72.5mV, current sensor can achieve 95 percent sensing accuracy, and the 91.7 percent power efficiency was achieved.