Abstract
In recent years, artificially layered microstructures have been considered as candidates for better thermoelectric applications. In this thesis, a theoretical framework for calculating electronic contributions to superlattice thermoelectric properties using realistic band structure models is presented. By following this computational procedure, we obtain thermoelectric properties, including electrical conductivity, electronic contribution to thermal conductivity, and thermopower, of InAs/GaSb/AlSb based type-Ⅱ superlattices. Theoretical results of thermoelectric transport coefficients and the dimensionless figure of merit for these type-Ⅱ superlattices are also presented.