Abstract
The TaN/HfON/GeO2/n-Ge pMOSFETs were fabricated with different formation processes of GeO2 interfacial layer. Ultra low EOT of around 0.5 nm is achieved using GeO2 IL grown by H2O plasma together with in-situ grown HfON gate dielectric, and simultaneously the peak hole mobility of Ge pMOSFET is 312 cm2/V*s.