Abstract
abstract In this study we have prepared FexPt1-x(x~ 44、51、58、66.5 at.%) thin films on Si(100) substrates by magnetron sputtering from separate Feand Pt targets. The magnetic properties of in-plane Hc、Ms and phase transformation was clarified by correlating the variation of compositionand annealing temperature after postannealing in a vacuum system. In order to control the orientation of the c axis, the epitaxial FePt (001) alloy films have been successfully grown using MMES method. We studied the effects of epitaxial stress resulting from different under layers (Cu、Co、Pt、Ag) on the degree of ordering and perpendicular anisotropy. We have grown Fe47Pt53(50nm)/Pt(10nm)/Cu(100nm) films on Si(100) substrates with various surface states (native oxide/Si、HF-etched Si and 200 nm SiO2-coated Si wafers) and investigated the diffusion effects of Cu and Si from underlayers and substrates, respectively, on the ordering temperature and magnetic properties of FePt films. The FePt films deposited on native oxide/Si wafers in particular had a high value Hc of 5.4 KOe after postannealing at 300oC for 2 hours. XRD and AES measurements have been used to investigate the microstructure of FePt multilayers. Excellent magnetic properties of FePt films on Pt/Cu underlayers might originate from the interface stress of Cu3Si formed between Cu underlayer and Si substrate.