Abstract
The feature size of Integrated Circuits Semiconductor devices is getting smaller and smaller. In addition, the effects of interference and diffraction of wavelength also result in the limitation of manufacture. So, the technology of electron beam photolithography process is more and more important in the future. For a long time, the traditional PMMA electron beam resist is more popular because of its advantage of high resolution. However, it doesn’t really use in the manufacture process by its bad quality of dry-etch durability. Therefore, we want to improve the quality of the PMMA resist by copolymerization and enhance the capability of dry-etch durability. Moreover, it can maintain sensitivity and contrast of some level and the graph resolution can also be approach under 0.1 mm. This research divided into two parts. First, the synthesis of copolymer and quality test will be done. We will synthesize some kinds of copolymers of series of methacrylates, such as, Poly(MMA-HEMA-PhMA), Poly(MMA-HEMA-BzMA) and Poly(MMA-HEMA-PhMA). Then, to copolymerize some kinds of polymers by using different molar ratio. Second, we proceeded with etch test by using three kinds of copolymers, mentioned above, and found that Poly(MMA-HEMA-PhMA) has the best quality of dry-etch durability. So, we changed the content of PhMA in the resist to do the test of dry-etch durability and photolithography process. The result showed that it is helpful to enhance the capability of resist of dry-etch durability by increasing the content of PhMA and the capability of dry-etch durability is better than the commercialized PMMA resist. But it can’t enhance unlimitedly because of the limit of the capability of dry-etch durability of PMMA itself. In the aspect of photolithography process, beside of the good performance of uniformity of the film, the synthetic resists in this research can get the graph of 0.1 mm in the resolution and don’t have the condition of distortion in commercialized PMMA resist graph.