Abstract
Demonstrated a novel silicon wire as well as a 3-D tapered coupler can be formed simultaneously through hydrogen annealing process. We use BPM to simulate our device structure, including the mode profile and coupling efficiency of the 3-D tapered coupler. We demonstrated ultra-high vacuum annealing can be used for fabricating the silicon wire waveguide, and observed the under-cut between the Si/SiO2 interface which is also shown in hydrogen annealing. We used cut-back method to measure the propagation loss and the coupler loss in our silicon wire waveguide, and found the propagation loss and coupler loss are 1.26(dB/cm) and 2.5(dB/taper length), respectively.