Abstract
It is well known that material prosperities will be different as the material in micro and nano scale. For instance, the effect of interface boundary and the carriers such as phonon and free-electron scattering have become the primary issue in thin film material. In this study, measurements of thermal conductivities of phase change memory material and several dielectric films by 3ω method is investigated. However, the limitation of 3ω method restricts the film thickness under 1 μm. For film thickness of 1um to 1 mm, further studies of pertinent measuring methods such as parallel-strip method and thickness difference method are constructed. Parallel-strip method is suitable for film thickness of 50 nm to 2 μm. The intrinsic thermal conductivities and boundary thermal resistances of three kinds of SiO2 films are measured, in which these specific SiO2 films are fabricated by PECVD deposition, thermal furnace growing and E-bean deposition respectively. In addition, thickness difference method is suitable for thick films where film thickness is in a range of 10 μm to 1 mm. The intrinsic thermal conductivities of three kinds of SU8-3050 thick films are also measured, in which the thickness of these specific SU8-3050 films are 42, 70 and 95 μm respectively. In short, the objective of this work provides three methods which thermal conductivities and boundary thermal resistance of dielectric films are characterized and are verified with the theory and literatures.