Abstract
The temperature dependence of the thin film dielectric breakdown phenomena is investigated. The studied thin films include SiO2, tantalum oxide (Ta2O5), lead zirconate titanate (PZT), barium titanate (BT) and barium strontium titanate (BST). The temperature range is from 300K to 500K . The experimental results are compared with the impact ionization drift model (I-D model) and the impact ionization recombination (I-R model) model. The experimental results agree with simulated values of both the I-D and the I-R model within one order magnitude. The larger deviation between the simulated values and the breakdown field is found for films thinner than 50 nm and thicker than 200 nm. The breakdown fields agree quite well with theoretical results for film thickness in the range from 50 nm to 200nm.