Abstract
The first part of the thesis is to investigate by simulation the I-V curve of the thin film transistor with various defects during manufacturing processes. We change material parameters to simulate the devices in MEDICI and study the effects of various defects in the device structures. In the second part of the thesis, we study the integration of a nonvolatile memory into the pixel circuit so that the threshold voltage increases more at high illumination. As the threshold voltage increases, the brightness of the pixel decreases, leading to better uniformity in brightness. We found that VD=12volt、VG=8volt、VB=-8volt，the shift in threshold voltage between dark and illumination can be as high as 23.54%.