Abstract
In the last decade, it has been desired to control photons since photonic crystal (PC) were fabricated. Because photonic crystal has photonic band gap structure, it makes light of specific wavelength range non-propagable in the structure. This is similar to electronic band gap of electron in the semiconductor. Consequently, many concepts of electronic band gap can be readily extended to photonic crystal. Recently, some novel revolutionary devices have been proposed, for example, photonic transistor. Hopefully, large-scale three-dimensional photonic crystals whose range of photonic band gap is in visible and near infrared can be produced. Then, new optical devices may be developed in the near future, for instance, narrow band gap optical fiber, highly effective laser, etc. These developments would lay foundation for technology of optical integrated circuit in the future, and major target is the production of optical computer.Due to the properties of photonic band gap of photonic crystal, its application field depends on the range of photonic band gap. So how to control the position of photonic band gap is an important issue. In this study, we used fine particles packing method to obtain opal structure, which is a kind of PCs, and detect obvious photonic band gap from transmittance spectra. Moreover, we successfully use different particle size (275, 385nm), calcination and coating semiconductor layer (ZnS, CdS, ZnSe, TiO2) onto opal structure to achieve shifting of photonic band gap. On the other hand, we also successfully prepared CdSe and NiO inverse opal by electrodeposition.