Abstract
We present the modeling of dipolar excitons in AlGaAs based, asymmetric coupled quantum wells with a vertical electric field induced two-dimensional electrostatic trap. We theoretically show that when the trap size and depth are carefully engineered, it is possible for the system to enter an exciton blockade regime in which single photon emissions can be obtained. Due to the unique properties such as the trap geometry and position can be precisely defined by photolithography, the proposed single photon emitter may find new applications in quantum information processing.