Abstract
AbstractIn this thesis, our object is the fabrication process of SAW device, we divided our work into three parts： First, we used the LP-MOCVD system to deposited aluminum and aluminum nitride thin films, and found out the optimum deposited condition. Secondly, we used μ-contact printing technique to transfer aminosilane on aluminum substrate. At last, we fabricated the transducer fingers by using RIE.First at all, we deposited aluminum thin films on Si and SiO2 substrate and aluminum nitride on SiO2 and sapphire substrate to understand substrate dependent of CVD aluminum and aluminum nitride thin films. The aluminum thin film was successfully deposited on SiO2 substrate with temperature 400~600℃、Ar flow 100~200sccm、reactive pressure 0.6~2torr. The aluminum nitride thin film was successfully deposited on sapphire substrate with temperature 850~950℃、NH3 : Ar =10 :1~30 :1、reactive pressure 0.6~4torr.Secondly, we transfer aminosilane wire width of 2μm on aluminum substrate with imprinting pressure 10~200psi、temperature100℃、imprinting time 1 min by μ-contact printing technique. The altitude of aminosilane was 190~260nm.At least, we fabricated the aluminum wire line of 1μm by metal-reactive ion etching system.